The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Sep. 27, 2016
National University Corporation Hokkaido University, Sapporo-shi, Hokkaido, JP;
Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;
Takashi Fukui, Sapporo, JP;
Katsuhiro Tomioka, Sapporo, JP;
National University Corporation Hokkaido University, Sapporo-shi, Hokkaido, JP;
Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;
Abstract
The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.