The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Jan. 20, 2017
Applied Materials, Inc., Santa Clara, CA (US);
Xuena Zhang, San Jose, CA (US);
Dong-Kil Yim, Pleasanton, CA (US);
Wenqing Dai, San Jose, CA (US);
Harvey You, Mountain View, CA (US);
Tae Kyung Won, San Jose, CA (US);
Hsiao-Lin Yang, Taipei, TW;
Wan-Yu Lin, Taipei, TW;
Yun-chu Tsai, Taichung, TW;
PATTERSON + SHERIDAN LLP, Santa Clara, CA (US);
Abstract
Embodiments of the disclosure generally provide methods of forming a capacitor with high capacitance and low leakage as well as a good interface control for thin film transistor (TFT) applications. In one embodiment, a thin film transistor structure includes a capacitor formed in a thin film transistor device. The capacitor further includes a common electrode disposed on a substrate, a dielectric layer formed on the common electrode and a pixel electrode formed on the dielectric layer. An interface protection layer formed between the common electrode and the dielectric layer, or between the dielectric layer and the pixel electrode. A gate insulating layer fabricated by a high-k material may also be utilized in the thin film transistor structure.