The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Jul. 31, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Linbo Shi, Shanghai, CN;
Fucheng Chen, Shanghai, CN;
SEMICONDUCTOR MANUFACTURING INTL. (SHANGHAI) Corp., Shanghai, CN;
SEMICONDUCTOR MANUFACTURING INTL. (BEIJING) Corp., Beijing, CN;
Abstract
The present disclosure relates to the field of semiconductor technologies, and discloses a method for manufacturing a semiconductor apparatus. The method includes: forming a water film on a bottom surface of a top wafer and a top surface of a bottom wafer; after the water film is formed, attaching the bottom surface of the top wafer to the top surface of the bottom wafer; disposing the attached top wafer and bottom wafer in a vacuum environment; and performing a thermal annealing process, so that the bottom surface of the top wafer is fusion-bonded to the top surface of the bottom wafer. The disclosed methods can reduce bubble voids existing between the bonded wafers.