The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Oct. 24, 2016
Sandisk Technologies Llc, Plano, TX (US);
Fumitaka Amano, Yokkaichi, JP;
Takashi Arai, Yokkaichi, JP;
Genta Mizuno, Yokkaichi, JP;
Shigehisa Inoue, Yokkaichi, JP;
Naoki Takeguchi, Yokkaichi, JP;
Takashi Hamaya, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
Void formation in tungsten lines in a three-dimensional memory device can be prevented by providing polycrystalline aluminum oxide liners in portions of lateral recesses that are laterally spaced from backside trenches by a distance grater than a predefined lateral offset distance. Tungsten nucleates on the polycrystalline aluminum oxide liners prior to nucleating on a metallic liner layer. Thus, tungsten layers can be deposited from the center portion of each backside recess, and the growth of tungsten can proceed toward the backside trenches. By forming the tungsten layers without voids, structural integrity of the three-dimensional memory device can be enhanced.