The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Dec. 27, 2016
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Yasushi Niimura, Matsumoto, JP;

Hideki Shishido, Matsumoto, JP;

Takayuki Shimatou, Matsumoto, JP;

Toshihiro Arai, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 29/06 (2006.01); G01R 31/26 (2014.01); H01L 25/00 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G01R 31/2601 (2013.01); H01L 25/50 (2013.01); H01L 29/0634 (2013.01); H01L 29/7802 (2013.01); G01R 31/2621 (2013.01); H01L 22/14 (2013.01);
Abstract

To easily assess a feedback capacitance of a semiconductor element. An assessment method of assessing a feedback capacitance of a semiconductor element is provided, the assessment method including: acquiring a first characteristic correlated with the feedback capacitance and a second characteristic correlated with the feedback capacitance; and assessing the feedback capacitance based on the first characteristic and the second characteristic. The first characteristic may be a characteristic that corresponds to a withstanding voltage of the semiconductor element, and the second characteristic may be an on-resistance of the semiconductor element. In the assessing, the feedback capacitance may be assessed based on a ratio between the first characteristic and the second characteristic.


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