The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
May. 21, 2018
Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;
Igor Peidous, Eaton, OH (US);
Jeffrey L. Libbert, O'Fallon, MO (US);
Srikanth Kommu, St. Charles, MO (US);
Andrew Marquis Jones, Wildwood, MO (US);
Samuel Christopher Pratt, St. Louis, MO (US);
Horacio Josue Mendez, Austin, TX (US);
Leslie George Stanton, Defiance, MO (US);
Michelle Rene Dickinson, Ballwin, MO (US);
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
A method of preparing a single crystal semiconductor handle wafer in the manufacture of a semiconductor-on-insulator device is provided. The single crystal semiconductor handle wafer is prepared to comprise a charge trapping layer, which is oxidized. The buried oxide layer in the resulting semiconductor-on-insulator device comprises an oxidized portion of the charge trapping layer and an oxidized portion of the single crystal semiconductor device layer.