The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Jul. 27, 2017
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Yong Min Yoo, Gangnam-gu, KR;
Jong Wan Choi, Gyeonggi-do, KR;
Young Jae Kim, Chungcheongnam-do, KR;
Sun Ja Kim, Chungcheongnam-do, KR;
Wan Gyu Lim, Gyeonggi-do, KR;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/225 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/225 (2013.01); H01L 21/2255 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/31053 (2013.01);
Abstract
A method of processing a substrate to enable selective doping without a photolithography process is provided. The method includes forming a diffusion barrier on the substrate having a patterned structure using plasma deposition method, removing the diffusion barrier except for part of the diffusion barrier using wet etching, forming a diffusion source layer on the patterned structure and the part of the diffusion barrier, and applying energy to the diffusion source layer.