The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Apr. 30, 2015
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Kazuhiko Kajigaya, Tokyo, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G06F 11/10 (2006.01); G06F 11/08 (2006.01); G11C 29/52 (2006.01); G06F 11/16 (2006.01); G06F 11/20 (2006.01); G11C 29/04 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 29/52 (2013.01); G06F 11/08 (2013.01); G06F 11/1048 (2013.01); G06F 11/1068 (2013.01); G11C 11/1673 (2013.01); G06F 11/16 (2013.01); G06F 11/167 (2013.01); G06F 11/1608 (2013.01); G06F 11/1612 (2013.01); G06F 11/1658 (2013.01); G06F 11/1662 (2013.01); G06F 11/1666 (2013.01); G06F 11/20 (2013.01); G11C 11/16 (2013.01); G11C 13/00 (2013.01); G11C 29/04 (2013.01); G11C 2029/0409 (2013.01); G11C 2029/0411 (2013.01);
Abstract

A semiconductor device is provided with normal memory cells constituted so as to store user data, reference memory cells constituted so as to generate a reference signal for reading out the normal memory cells, and a control circuit that carries out a defect detecting operation for detecting whether or not the reference memory cell and data stored in the reference memory cell are coincident with expected values on the stored data read out from the reference memory cells. Moreover, it is also provided with a control circuit for executing a defect correcting operation for correcting data to be stored in the reference memory cells that are detected as defective. Furthermore, it is also provided with a control circuit that is configured so as to cut off the reference memory cell detected as defective from the sense amplifier.


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