The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Dec. 20, 2017
Micron Technology, Inc., Boise, ID (US);
Amitava Majumdar, Boise, ID (US);
Rajesh Kamana, Boise, ID (US);
Hongmei Wang, Boise, ID (US);
Shawn D. Lyonsmith, Boise, ID (US);
Ervin T. Hill, Boise, ID (US);
Zengtao T. Liu, Eagle, ID (US);
Marlon W. Hug, Kuna, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.