The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Dec. 13, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Yafeng Zhang, Shanghai, CN;
Liang Qiao, Shanghai, CN;
Chunyuan Hou, Shanghai, CN;
Jun Xu, Shanghai, CN;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/22 (2006.01); G11C 16/14 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/225 (2013.01); G11C 16/14 (2013.01); G11C 16/30 (2013.01);
Abstract
Apparatuses and methods for protecting transistors through charge sharing are disclosed herein. An example apparatus includes a transistor comprising a gate node and a bulk node, a charge sharing circuit coupled between the gate and bulk nodes, and logic. The charge sharing circuit is configure to equalize charge differences between the gate and bulk nodes, and the logic is configured to enable the charge sharing circuit based at least in part on a combination of first and second signals, which indicate the presence of a condition.