The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Sep. 17, 2015
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventor:
Nirmal David Theodore, Mesa, AZ (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/20 (2010.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 31/03044 (2013.01); H01L 31/035281 (2013.01); H01L 31/1848 (2013.01); H01L 33/0075 (2013.01); H01L 33/20 (2013.01);
Abstract
Systems and methods for electronic devices are presented. A device includes a substrate. An Indium Gallium Nitride (InGaN) nanoring is formed over the substrate. The InGaN nanoring includes an alloy of Indium Nitride (InN) and Gallium Nitride (GaN). The alloy includes at least 6 percent Indium. A GaN layer may be formed over the InGaN nanoring, and a first electrode is formed over the GaN layer. In one embodiment, the alloy includes less than about 70 percent Indium.