The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Mar. 11, 2014
Ams Ag, Unterpremstaetten, AT;
Jordi Teva, Veldhoven, NL;
Frederic Roger, Graz, AT;
Ewald Stueckler, Unterpremstaetten, AT;
Stefan Jessenig, Graz, AT;
Rainer Minixhofer, Unterpremstaetten, AT;
Ewald Wachmann, Kainbach, AT;
Martin Schrems, Eggersdorf, AT;
Guenther Koppitsch, Lieboch, AT;
ams AG, Unterpremstaetten, AT;
Abstract
The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.