The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Apr. 02, 2018
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Naoyuki Ohse, Matsumoto, JP;
Yusuke Kobayashi, Tsukuba, JP;
Takahito Kojima, Matsumoto, JP;
Shinsuke Harada, Tsukuba, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
On a front surface of a semiconductor base, an n-type drift layer, a p-type base layer, an n-type source region, and a gate trench and a contact trench penetrating the n-type source region and the p-type base layer and reaching the n-type drift layer are provided. The contact trench is provided separated from the gate trench. A Schottky metal is embedded in the contact trench and forms a Schottky contact with the n-type drift layer at a side wall of the contact trench. An ohmic metal is provided at a bottom of the contact trench and forms an ohmic contact with the n-type drift layer.