The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Apr. 05, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Abstract
Semiconductor device and fabrication method are provided. The method includes: providing a base substrate with a bottom metallic layer in the base substrate and a dielectric layer on the base substrate; forming interconnect openings through the dielectric layer and exposing the bottom metallic layer, where each interconnect openings includes a contacting hole and a groove on the contacting hole; forming a first conducting layer in the contacting hole, where the first conducting layer is made of a material having a first conductivity along a direction from the bottom metallic layer to a top surface of the first conducting layer; and after forming the first conducting layer, forming a second conducting layer in the groove, where the second conducting layer is made of a material having a second conductivity along a direction parallel to the top surface of the base substrate and the first conductivity is greater than the second conductivity.