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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10373908 B1

PDFFull Text
Date of Patent:
Aug. 06, 2019

Filed:

Dec. 21, 2017

Dielectric thermal conductor for passivating efuse and metal resistor

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Qing Cao, Yorktown Heights, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Zhengwen Li, Scarsdale, NY (US);

Fei Liu, Yorktown Heights, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Vazken Alexanian

Primary Examiner:

Theresa T Doan

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 23/525 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/373 (2006.01); H01L 23/367 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/525 (2013.01); H01L 21/02115 (2013.01); H01L 21/32053 (2013.01); H01L 21/823437 (2013.01); H01L 23/367 (2013.01); H01L 23/3677 (2013.01); H01L 23/3732 (2013.01); H01L 23/528 (2013.01); H01L 23/5228 (2013.01); H01L 23/5256 (2013.01); H01L 23/5329 (2013.01); H01L 23/53209 (2013.01); H01L 29/0649 (2013.01);
Abstract

A semiconductor device includes a first dielectric layer formed on a second dielectric layer and planar contacts formed in the second dielectric layer. The planar contacts are spaced apart to form a gap therebetween. The first dielectric layer includes a thermally conductive dielectric layer and is formed on lateral sides of the planar contacts and in the gap. A resistive element is formed between the planar contacts over the gap and in contact with at least the thermally conductive dielectric layer in the gap.

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