The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Nov. 17, 2017
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Hai Yang Zhang, Shanghai, CN;
Yan Wang, Shanghai, CN;
Abstract
A photomask manufacturing method relating to semiconductor technology is presented. The manufacturing method involves providing a substrate structure comprising an etch material layer, a first sacrificial layer on a portion of the etch material layer, and a photomask layer on an upper surface of the etch material layer and on an upper surface and a side surface of the first sacrificial layer; forming a second sacrificial layer covering the photomask layer on the etch material layer and on the side surface of the first sacrificial layer; etching the photomask layer not covered by the second sacrificial layer to expose the first sacrificial layer; removing the first sacrificial layer and the second sacrificial layer; and removing the photomask layer on the etch material layer. This photomask manufacturing method offers a photomask of better symmetricity than those from conventional methods.