The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Aug. 22, 2017
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Akhil Singhal, Beaverton, OR (US);

Patrick A. Van Cleemput, San Jose, CA (US);

Martin E. Freeborn, San Jose, CA (US);

Bart J. van Schravendijk, Palo Alto, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); C23C 16/04 (2006.01); C23C 16/509 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32091 (2013.01); C23C 16/045 (2013.01); C23C 16/4554 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/45565 (2013.01); C23C 16/50 (2013.01); C23C 16/5096 (2013.01); H01J 37/3244 (2013.01); H01J 37/32174 (2013.01); H01J 37/32449 (2013.01); H01J 37/32568 (2013.01); H01J 37/32577 (2013.01); H01J 37/32715 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3321 (2013.01);
Abstract

Provided are apparatuses and methods for performing deposition and etch processes in an integrated tool. An apparatus may include a plasma processing chamber that is a capacitively-coupled plasma reactor, and the plasma processing chamber can include a showerhead that includes a top electrode and a pedestal that includes a bottom electrode. The apparatus may be configured with an RF hardware configuration so that an RF generator may power the top electrode in a deposition mode and power the bottom electrode in an etch mode. In some implementations, the apparatus can include one or more switches so that at least an HFRF generator is electrically connected to the showerhead in a deposition mode, and the HFRF generator and an LFRF generator is electrically connected to the pedestal and the showerhead is grounded in the etch mode.


Find Patent Forward Citations

Loading…