The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2019

Filed:

Sep. 29, 2015
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Yu Yamazawa, Tokyo, JP;

Kazutoshi Kaji, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/28 (2006.01); H01J 37/20 (2006.01); H01J 37/244 (2006.01); H01J 37/22 (2006.01); H01J 37/26 (2006.01);
U.S. Cl.
CPC ...
H01J 37/28 (2013.01); H01J 37/20 (2013.01); H01J 37/22 (2013.01); H01J 37/244 (2013.01); H01J 37/265 (2013.01); H01J 2237/20207 (2013.01); H01J 2237/20235 (2013.01); H01J 2237/24485 (2013.01); H01J 2237/2802 (2013.01);
Abstract

An object of the present invention relates to high-resolution observation on a light field STEM, a dark field image STEM, and an EELS, at a low acceleration voltage. The present invention relates to controlling on incorporation angles of a STEM detector and an electron energy loss spectroscopy by changing the disposition of a sample with respect to an optical axis direction of a primary electron beam in a scanning transmission microscopy including an electron energy loss spectroscopy. According to the present invention, it is possible to easily control an optimum scattering angle in each of a light field STEM, a dark field STEM, and an EELS while suppressing occurrence of chromatic aberration accompanying the controlling on the incorporation angle.


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