The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
May. 24, 2018
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Jie Zeng, Singapore, SG;
Chai Ean Gill, Chandler, AZ (US);
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 27/02 (2006.01); H01L 23/60 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 23/60 (2013.01); H02H 9/046 (2013.01); H01L 27/0259 (2013.01); H01L 27/0262 (2013.01);
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to electrostatic discharge protective structures and methods of manufacture. The structure includes: an epitaxial layer comprising a first region, a second region and a third region; a plurality of gate structures connecting the first region to the second region and the second region to the third region; and a plurality of terminals connected to the first region and the third region and the gate structures.