The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2019

Filed:

Sep. 06, 2018
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Materials Co., Ltd., Yokohama-Shi, Kanagawa-Ken, JP;

Inventors:

Hiromasa Kato, Nagareyama Chiba, JP;

Noboru Kitamori, Miura Kanagawa, JP;

Takayuki Naba, Chigasaki Kanagawa, JP;

Masashi Umehara, Yokohama Kanagawa, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/48 (2006.01); H05K 1/02 (2006.01); H05K 1/03 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); H01L 21/4807 (2013.01); H05K 1/0271 (2013.01); H05K 1/0306 (2013.01); H01L 23/562 (2013.01);
Abstract

The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1−t2|≥0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm. Due to above structure, even if the silicon nitride circuit board has a large difference in thickness between the metal plates attached on front and rear sides of the silicon nitride substrate, TCT properties can be greatly improved.


Find Patent Forward Citations

Loading…