The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Sep. 07, 2017
Applicant:
Synopsys, Inc., Mountain View, CA (US);
Inventors:
Colin Stewart Bill, Cupertino, CA (US);
Harry Luan, Saratoga, CA (US);
Assignee:
Synopsys, Inc., Mountain View, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/39 (2006.01); G11C 5/06 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01); H01L 29/74 (2006.01); H01L 27/102 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
G11C 11/39 (2013.01); G11C 5/06 (2013.01); G11C 5/063 (2013.01); G11C 16/0466 (2013.01); G11C 16/14 (2013.01); H01L 27/1027 (2013.01); H01L 29/7404 (2013.01); H01L 29/7436 (2013.01); H01L 29/792 (2013.01);
Abstract
An MTP (Many Times Programmable) memory cell for integrated circuit memory arrays is described. The cell includes an MTP device and a thyristor interconnected so that the MTP device triggers the thyristor to turn on during a Read or Verify operation. The difference in threshold voltages between a data memory cell and a reference memory cell is used to determine the information in the data memory cell. Different memory cell structures may be constructed for different memory array requirements.