The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2019

Filed:

Jun. 21, 2017
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Anthony Correale, Jr., Raleigh, NC (US);

Benjamin Bowers, Cary, NC (US);

Tracey Della Rova, Wake Forest, NC (US);

William Goodall, III, Cary, NC (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 27/00 (2006.01); H01L 23/535 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 27/118 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5072 (2013.01); G06F 17/5068 (2013.01); G06F 17/5077 (2013.01); H01L 23/535 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/11807 (2013.01); G06F 2217/12 (2013.01);
Abstract

Disclosed systems and methods pertain to finfet based integrated circuits designed with logic cell architectures which support multiple diffusion regions for n-type and p-type diffusions. Different diffusion regions of each logic cell can have different widths or fin counts. Abutting two logic cells is enabled based on like fin counts for corresponding p-diffusion regions and n-diffusion regions of the two logic cells. Diffusion fills are used at common edges between the two logic cells for extending lengths of diffusion, based on the like fin counts. The logic cell architectures support via redundancy and the ability to selectively control threshold voltages of different logic cells with implant tailoring. Half-row height cells can be interleaved with standard full-row height cells.


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