Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, circuit pattern forming method, and purification method

Abstract

A compound or a resin represented by the following formula (1). (in formula (1), each X independently represents an oxygen atom, a sulfur atom, or an uncrosslinked state, each Ris independently selected from the group consisting of a halogen group, a cyano group, a nitro group, an amino group, a hydroxyl group, a thiol group, a heterocyclic group, an alkyl group having 1 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms, and combinations thereof, in which the alkyl group, the alkenyl group and the aryl group optionally include an ether bond, a ketone bond or an ester bond, each Rindependently represents an alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, a thiol group or a hydroxyl group, in which at least one Rrepresents a group including a hydroxyl group or a thiol group, each m is independently an integer of 0 to 7 (in which at least one m is an integer of 1 to 7.), each p is independently 0 or 1, q is an integer of 0 to 2, and n is 1 or 2).