The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Sep. 29, 2015
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventor:
Martin Standing, Velden, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2006.01); H01L 21/027 (2006.01); H01L 23/00 (2006.01); H01L 25/075 (2006.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 21/0273 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 25/0753 (2013.01); H01L 33/62 (2013.01); H01L 24/11 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/1319 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/1601 (2013.01); H01L 2224/16057 (2013.01); H01L 2224/16058 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/811 (2013.01); H01L 2224/8102 (2013.01); H01L 2224/8185 (2013.01); H01L 2224/8192 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81192 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/81862 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2924/06 (2013.01); H01L 2924/0635 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/0675 (2013.01); H01L 2924/0781 (2013.01); H01L 2924/07802 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1426 (2013.01); H01L 2933/0066 (2013.01);
Abstract
In an embodiment, an interconnection structure includes a first semiconductor device including a conductive stud, a second device including a contact pad, an adhesive layer including an organic component arranged between a distal end of the conductive stud and the contact pad, the adhesive layer coupling the conductive stud to the contact pad, and a conductive layer extending from the conductive stud to the contact pad. The conductive layer has a melting point of at least 600° C.