The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Oct. 31, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jeffrey P. Gambino, Portland, OR (US);

Mark D. Jaffe, Shelburne, VT (US);

Steven M. Shank, Jericho, VT (US);

Anthony K. Stamper, Williston, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 23/482 (2006.01); H01L 21/762 (2006.01); H01L 23/532 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/683 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 21/6835 (2013.01); H01L 21/743 (2013.01); H01L 21/76251 (2013.01); H01L 21/76898 (2013.01); H01L 23/4825 (2013.01); H01L 23/4827 (2013.01); H01L 23/53271 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/1087 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68368 (2013.01);
Abstract

A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming a first switch and a second switch in the device layer. An electrically-conducting connection is formed in a trench. The handle wafer is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.


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