The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Mar. 01, 2018
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Hiroshi Ashihara, Toyama, JP;

Kazuhiro Harada, Toyama, JP;

Kimihiko Nakatani, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/285 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); C23C 16/34 (2013.01); C23C 16/45527 (2013.01); C23C 16/45546 (2013.01); H01L 21/285 (2013.01); H01L 21/28556 (2013.01); H01L 29/4966 (2013.01);
Abstract

A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying two or more kinds of halogen-based precursors having the same major elements and different halogen elements, or different major elements and the same halogen elements, or different major elements and different halogen elements to the substrate while overlapping at least portions of supply periods of the two or more kinds of halogen-based precursors; and supplying a reactant having a chemical structure different from chemical structures of the two or more kinds of halogen-based precursors to the substrate.


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