The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Jun. 12, 2017
Applicant:

Jeol Ltd., Tokyo, JP;

Inventors:

Yukihito Kondo, Tokyo, JP;

Ryusuke Sagawa, Tokyo, JP;

Assignee:

JEOL Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/22 (2006.01); H01J 37/09 (2006.01); H01J 37/04 (2006.01); H01J 37/147 (2006.01); H01J 37/28 (2006.01); H01J 37/244 (2006.01);
U.S. Cl.
CPC ...
H01J 37/22 (2013.01); H01J 37/045 (2013.01); H01J 37/09 (2013.01); H01J 37/1474 (2013.01); H01J 37/244 (2013.01); H01J 37/28 (2013.01); H01J 2237/024 (2013.01); H01J 2237/0435 (2013.01); H01J 2237/0453 (2013.01); H01J 2237/2443 (2013.01); H01J 2237/2446 (2013.01); H01J 2237/2449 (2013.01); H01J 2237/24475 (2013.01); H01J 2237/28 (2013.01); H01J 2237/2802 (2013.01); H01J 2237/2803 (2013.01);
Abstract

There is provided an electron microscope capable of recording images in a shorter time. The electron microscope () includes: an illumination system () for illuminating a sample (S) with an electron beam; an imaging system () for focusing electrons transmitted through the sample (S); an electron deflector () for deflecting the electrons transmitted through the sample (S); an imager () having a photosensitive surface () for detecting the electrons transmitted through the sample (S), the imager () being operative to record focused images formed by the electrons transmitted through the sample (S); and a controller () for controlling the electron deflector () such that an active electron incident region () of the photosensitive surface () currently hit by the beam is varied in response to variations in illumination conditions of the illumination system ().


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