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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10358742 B1

PDFFull Text
Date of Patent:
Jul. 23, 2019

Filed:

Jun. 02, 2017

Gao-based crystal film, and crystal multilayer structure

Applicants:

Tamura Corporation, Tokyo, JP;

Novel Crystal Techonology, Inc., Saitama, JP;

Inventors:

Kohei Sasaki, Tokyo, JP;

Daiki Wakimoto, Tokyo, JP;

Assignees:

TAMURA CORPORATION, Tokyo, JP;

Novel Crystal Technology, Inc., Saitama, JP;

Attorney:

Scully Scott Murphy and Presser

Primary Examiner:

Kyoung Lee

Assistant Examiner:

Christina A Sylvia

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 23/06 (2006.01); C23C 14/08 (2006.01); C23C 14/28 (2006.01); C30B 23/02 (2006.01); C30B 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/36 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
C30B 23/06 (2013.01); C23C 14/08 (2013.01); C23C 14/28 (2013.01); C30B 23/025 (2013.01); C30B 29/16 (2013.01); H01L 21/02414 (2013.01); H01L 21/02483 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02584 (2013.01); H01L 21/02631 (2013.01); H01L 29/24 (2013.01); H01L 29/36 (2013.01); H01L 29/365 (2013.01); H01L 29/7787 (2013.01);
Abstract

A method of growing a conductive GaO-based crystal film by MBE includes producing a Ga vapor and a Si-containing vapor and supplying the vapors as molecular beams onto a surface of a GaO-based crystal substrate so as to grow the GaO-based crystal film. The GaO-based crystal film includes a Si-containing GaO-based single crystal film. The Si-containing vapor is produced by heating Si or a Si compound and Ga while allowing the Si or a Si compound to contact with the Ga.

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Quick Actions:

Sasaki, Kohei. (2019). Gao-based crystal film, and crystal multilayer structure (U.S. Patent No. 10358742). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10358742

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