The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Apr. 21, 2017
Lam Research Corporation, Fremont, CA (US);
Keith Fox, Tigard, OR (US);
Jonathan Church, Portland, OR (US);
LAM RESEARCH CORPORATION, Fremont, CA (US);
Abstract
A method for reducing post-annealing shrinkage of silicon dioxide film includes arranging a substrate on a substrate support in a processing chamber; setting a pressure in the processing chamber to a predetermined pressure range; setting a temperature of the substrate support to a predetermined temperature range; supplying a process gas mixture to a gas distribution device. The process gas mixture includes TEOS gas, a gas including an oxygen species, and argon gas. The argon gas comprises greater than 20% of the process gas mixture by volume. The method further includes striking plasma and depositing the film on the substrate.