The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

May. 23, 2017
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Narasimhulu Kanike, San Diego, CA (US);

Qingqing Liang, San Diego, CA (US);

Fabio Alessio Marino, San Marcos, CA (US);

Francesco Carobolante, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 27/08 (2006.01); H01L 27/092 (2006.01); H01L 29/93 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/0805 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01); H01L 29/7855 (2013.01); H01L 29/93 (2013.01);
Abstract

Certain aspects of the present disclosure generally relate to a semiconductor device and techniques for fabricating a semiconductor device. In certain aspects, the semiconductor device includes a fin, a first non-insulative region disposed adjacent to a first side of the fin, and a second non-insulative region disposed adjacent to a second side of the fin. In certain aspects, the first non-insulative region and the second non-insulative region are separated by a trench, at least a portion of the trench being filled with a dielectric material disposed around the fin.


Find Patent Forward Citations

Loading…