The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Oct. 31, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Feng Yuan, Hsinchu, TW;
Hung-Ming Chen, Hsinchu County, TW;
Tsung-Lin Lee, Hsinchu, TW;
Chang-Yun Chang, Taipei, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An exemplary method of forming a fin field effect transistor that includes first and second etching processes to form a fin structure. The fin structure includes an upper portion and a lower portion separated at a transition. The upper portion has sidewalls that are substantially perpendicular to the major surface of the substrate. The lower portion has tapered sidewalls on opposite sides of the upper portion and a base having a second width larger than the first width.