The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Aug. 21, 2018
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Assignee:
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 29/417 (2006.01); H01L 29/36 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/26546 (2013.01); H01L 29/41766 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01); H01L 29/365 (2013.01); H01L 29/66431 (2013.01); H01L 29/778 (2013.01); H01L 29/7782 (2013.01); H01L 29/7783 (2013.01); H01L 29/7784 (2013.01); H01L 29/7785 (2013.01);
Abstract
A HEMT device is provided. The HEMT device includes a substrate, a first epitaxial layer, a second epitaxial layer, an insulating layer, a gate, a source, and a drain. The first epitaxial layer is formed on the substrate. The second epitaxial layer is formed on the first epitaxial layer. The insulating layer is formed on the second epitaxial layer. The gate is formed in the insulating layer and extends into the second epitaxial layer. The source and the drain are formed in the insulating layer and extend into the second epitaxial layer, wherein the source and the drain are located on both sides of the gate.