The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Sep. 27, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Shih-Wei Wang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4232 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7855 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A FinFET device includes a fin structure, a gate structure, a gate helmet, a pair of spacers and a contact structure. The fin structure protrudes from a semiconductor substrate. The gate structure crosses over the fin structure. The gate helmet includes a base and a pair of fringes. The base is disposed on a top surface of the gate structure. The pair of fringes is extended upwards from opposite sides of the base. The pair of spacers is positioned on the pair of the fringes. The contact structure is disposed between the pair of the fringes and between the pair of the spacers.