The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Jun. 27, 2018
Sandisk Technologies Llc, Addison, TX (US);
James Kai, Santa Clara, CA (US);
Zhixin Cui, Yokkaichi, JP;
Murshed Chowdhury, Fremont, CA (US);
Johann Alsmeier, San Jose, CA (US);
Tong Zhang, Palo Alto, CA (US);
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A first-tier structure including a first alternating stack of first insulating layers and first spacer material layers is formed over a substrate. First-tier memory openings and at least one type of first-tier contact openings can be formed simultaneously employing a same anisotropic etch process. The first-tier contact openings formed over stepped surfaces of the first alternating stack may extend through the first alternating stack, or may stop on the stepped surfaces. Sacrificial first-tier opening fill portions are formed in the first-tier openings, and a second-tier structure can be formed over the first-tier structure. Memory openings including volumes of the first-tier memory openings are formed through the multi-tier structure, and memory stack structures are formed in the memory openings. Various contact openings are formed through the multi-tier structure, and various contact via structures are formed in the contact openings.