The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Jan. 19, 2016
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11524 (2017.01); H01L 29/49 (2006.01); H01L 21/768 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 21/76829 (2013.01); H01L 21/76832 (2013.01); H01L 27/11582 (2013.01); H01L 29/4991 (2013.01); H01L 21/7682 (2013.01); H01L 21/76805 (2013.01); H01L 21/76807 (2013.01);
Abstract
A semiconductor storage device according to an embodiment includes a plurality of memory cells, a first film, and a second film. The memory cells are placed at intervals in a first direction on a semiconductor substrate. The first film is placed continuously in the first direction above the memory cells so as to cover all of the memory cells and including mainly metal oxide. The second film is placed on the first film and including mainly silicon nitride or silicon dioxide.
Fujitsuka, Ryota. (2019). Semiconductor storage device and manufacturing method thereof (U.S. Patent No. 10355006). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10355006
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile