The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10354995 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 16, 2019

Filed:

Mar. 16, 2018
Applicant:

Monolithic 3d Inc., San Jose, CA (US);

Inventors:

Zvi Or-Bach, San Jose, CA (US);

Deepak C. Sekar, Sunnyvale, CA (US);

Brian Cronquist, San Jose, CA (US);

Israel Beinglass, Sunnyvale, CA (US);

Zeev Wurman, Palo Alto, CA (US);

Assignee:

Monolithic 3D Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); G06F 9/00 (2006.01); B82Y 10/00 (2011.01); H01L 21/84 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 27/11 (2006.01); H01L 27/12 (2006.01); H01L 27/24 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/268 (2006.01); H01L 21/762 (2006.01); H01L 21/822 (2006.01); H01L 23/367 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 27/118 (2006.01); H01L 27/11578 (2017.01); H01L 27/11551 (2017.01); H01L 27/112 (2006.01); H01L 27/108 (2006.01); H01L 27/105 (2006.01); H01L 23/544 (2006.01); G03F 9/00 (2006.01); H01L 27/1157 (2017.01); H01L 29/775 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); B82Y 10/00 (2013.01); G03F 9/7076 (2013.01); G03F 9/7084 (2013.01); H01L 21/76254 (2013.01); H01L 21/8221 (2013.01); H01L 21/84 (2013.01); H01L 23/367 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/544 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/0886 (2013.01); H01L 27/105 (2013.01); H01L 27/10876 (2013.01); H01L 27/10894 (2013.01); H01L 27/10897 (2013.01); H01L 27/11 (2013.01); H01L 27/112 (2013.01); H01L 27/1108 (2013.01); H01L 27/1157 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01); H01L 27/11807 (2013.01); H01L 27/11898 (2013.01); H01L 27/1203 (2013.01); H01L 27/249 (2013.01); H01L 27/2436 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/4238 (2013.01); H01L 29/42372 (2013.01); H01L 29/42392 (2013.01); H01L 29/458 (2013.01); H01L 29/66272 (2013.01); H01L 29/66439 (2013.01); H01L 29/66621 (2013.01); H01L 29/66901 (2013.01); H01L 29/775 (2013.01); H01L 29/78639 (2013.01); H01L 29/78642 (2013.01); H01L 29/78645 (2013.01); H01L 29/78696 (2013.01); H01L 21/268 (2013.01); H01L 21/823431 (2013.01); H01L 23/481 (2013.01); H01L 24/73 (2013.01); H01L 29/66545 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/80001 (2013.01); H01L 2924/00 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/00012 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A semiconductor device including: a first layer including a first memory cell, the first memory cell including a first transistor; a second layer including a second memory cell, the second memory cell including a second transistor; a periphery layer including a memory peripherals transistor, the periphery layer is disposed underneath the first layer; a memory including at least the first memory cell and the second memory cell, where the second memory cell overlays the first memory cell, where the first memory cell and the second memory cell have both been processed following a lithography step and accordingly are precisely aligned, and where a peripherals circuit includes the memory peripherals transistor and controls the memory; a first external connections underlying the periphery layer, the first external connections includes connections from the device to a first external device; and a second external connections overlying the second layer, the second external connections includes connections from the device to a second external device.


Find Patent Forward Citations

Quick Actions:

Or-Bach, Zvi. (2019). Semiconductor memory device and structure (U.S. Patent No. 10354995). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10354995

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…