The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Feb. 23, 2018
Applicant:
Nikon Corporation, Tokyo, JP;
Inventor:
Yuji Shiba, Ageo, JP;
Assignee:
NIKON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); G03F 7/20 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/66 (2006.01); G03F 7/00 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); G03F 7/0002 (2013.01); G03F 7/20 (2013.01); G03F 9/708 (2013.01); G03F 9/7046 (2013.01); H01L 21/0274 (2013.01); H01L 21/3086 (2013.01); H01L 22/12 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A mark forming method includes: exposing a wafer with a mask image to form first and second resist marks that have different shapes than one another based on a portion of the mask image; applying a polymer layer that contains a block copolymer to the wafer by spin-coating; forming self-assembled regions in the applied polymer layer; selectively removing a portion of the self-assembled regions; and forming first and second wafer marks on the wafer using the first and second resist marks. This makes it possible to form the marks when forming circuit patterns using self-assembly of a block copolymer.