The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Apr. 30, 2018
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Nian Niles Yang, Mountain View, CA (US);

Pitamber Shukla, Milpitas, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G06F 11/07 (2006.01); G06F 11/00 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3404 (2013.01); G06F 11/008 (2013.01); G06F 11/0727 (2013.01); G11C 16/14 (2013.01);
Abstract

The present disclosure is directed to a device, a method, and a non-transitory computer readable medium for determining a level of uncertainty of programmed states of memory cells. In one aspect, a memory device includes memory cells, an uncertainty prediction circuit coupled to the memory cells, and a data conversion circuit coupled to the memory cells. The uncertainty prediction circuit is configured to determine, from a subset of the memory cells coupled to a word line, a number of memory cells having a predetermined state. The data conversion circuit is configured to apply a data conversion to a portion of data stored by the subset of the memory cells, in response to the uncertainty prediction circuit determining that the number of memory cells is between a first threshold and a second threshold.


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