The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Aug. 30, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Yuanli Ding, Singapore, SG;
Zhibiao Zhou, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
G11C 11/221 (2013.01); G11C 11/2297 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01);
Abstract
A dual mode memory system is provided in the present invention, which includes a memory cell array with a plurality of oxide-semiconductor field effect transistors, each said oxide-semiconductor field effect transistor has a ferroelectric layer in the bottom gate to modulate the bottom gate bias voltage according to the polarization voltages provided by the dual mode control unit.