The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
May. 25, 2016
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Hsin-Pang Lu, Hsinchu County, TW;
Hsin-Wen Chen, Hsinchu County, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/56 (2006.01); G01R 31/26 (2014.01); H01L 49/02 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
G01R 31/26 (2013.01); G05F 1/56 (2013.01); H01L 28/40 (2013.01); H01L 21/823892 (2013.01); H01L 27/092 (2013.01);
Abstract
A method for controlling voltage of a doped well in a substrate is provided. The substrate and the doped well are in different conductive type. The method includes applying a substrate voltage to the substrate while a well power for applying a well voltage to the doped well is turned off. The method also includes detecting a voltage level of one of the doped well and the substrate to judge whether or not a voltage target is reached. The well power is turned on to apply the well voltage to the doped well when the voltage level as detected reaches to the voltage target.