The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Feb. 16, 2018
Ken Kitamura, Tokyo, JP;
Masato Toita, Tokyo, JP;
Hironori Ishii, Tokyo, JP;
Yuting Wang, Tokyo, JP;
Leo J. Schowalter, Latham, NY (US);
Jianfeng Chen, Troy, NY (US);
James R. Grandusky, Waterford, NY (US);
Ken Kitamura, Tokyo, JP;
Masato Toita, Tokyo, JP;
Hironori Ishii, Tokyo, JP;
Yuting Wang, Tokyo, JP;
Leo J. Schowalter, Latham, NY (US);
Jianfeng Chen, Troy, NY (US);
James R. Grandusky, Waterford, NY (US);
CRYSTAL IS, INC., Green Island, NY (US);
Abstract
In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.