The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Apr. 11, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/108 (2006.01); H01L 27/088 (2006.01); H01L 21/84 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/10879 (2013.01); H01L 29/41791 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device includes a substrate, at least one gate, and an insulating structure. The substrate includes at least one semiconductor fin. The gate is disposed on the semiconductor fin. The gate has at least one end sidewall. The insulating structure is disposed adjacent to the gate. The insulating structure has a sidewall facing the gate, and the end sidewall of the gate is in contact with a portion of the sidewall of the insulating structure while leaves another portion of the sidewall of the insulating structure uncovered.