The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Sep. 19, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Puneet Harischandra Suvarna, Menands, NY (US);
Steven J. Bentley, Menands, NY (US);
Daniel Chanemougame, Troy, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/00 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01);
Abstract
One illustrative method disclosed herein includes, among other things, forming a vertically oriented channel semiconductor structure above a substrate, performing an epi deposition process to simultaneously form at least a portion of a bottom source/drain region and at least a portion of a top source/drain region during the epi deposition process and, after performing the epi deposition process, forming a gate structure around a portion of the vertically oriented channel semiconductor structure.