The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Jul. 18, 2018
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Johnson & Johnson Vision Care, Inc., Jacksonville, FL (US);

Inventors:

Paul S. Andry, Yorktown Heights, NY (US);

Cornelia K. Tsang, Medford, VA (US);

Adam Toner, Jacksonville, FL (US);

Assignees:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 23/552 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 23/3157 (2013.01); H01L 23/3192 (2013.01); H01L 23/5226 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 21/561 (2013.01); H01L 21/6836 (2013.01); H01L 23/3114 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 24/94 (2013.01); H01L 2224/03 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/3025 (2013.01);
Abstract

After forming a first electromagnetic radiation blocking layer over a front side of a device wafer, the device wafer is bonded to a handle substrate from the front side. A semiconductor substrate in the device wafer is thinned from its backside. Trenches are formed extending through the device wafer and the first electromagnetic radiation blocking layer such that the device wafer is singulated into semiconductor dies. A second electromagnetic radiation blocking layer portion is formed on a backside surface of and sidewalls surfaces of each of the semiconductor dies such that each of the semiconductor dies are fully encapsulated by the first and second electromagnetic radiation blocking layer portions.


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