The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Mar. 16, 2018
Applicant:
L'air Liquide, Société Anonyme Pour I'etude ET I'exploitation Des Procédés Georges Claude, Paris, FR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02063 (2013.01); H01L 21/0273 (2013.01); H01L 21/0332 (2013.01); H01L 21/28017 (2013.01); H01L 21/3081 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76898 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01);
Abstract
Methods for minimizing plasma-induced sidewall damage during low k etch processes are disclosed. The methods etch the low k layers using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N≡C—R; (N≡C—)—(R)—(—C≡N); R[—C═N(R)]; and R—N—H, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HFCwith a=0-11, b=0-11, and c=0-5.