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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10347498 B1

PDFFull Text
Date of Patent:
Jul. 09, 2019

Filed:

Mar. 16, 2018

Methods of minimizing plasma-induced sidewall damage during low k etch processes

Applicant:

L'air Liquide, Société Anonyme Pour I'etude ET I'exploitation Des Procédés Georges Claude, Paris, FR;

Inventors:

Chih-yu Hsu, Tsukuba, JP;

Peng Shen, Tsukuba, JP;

Nathan Stafford, Damascus, OR (US);

Assignee:

L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude, Paris, FR;

Attorney:

Yan Jiang

Primary Examiner:

Richard A Booth

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02063 (2013.01); H01L 21/0273 (2013.01); H01L 21/0332 (2013.01); H01L 21/28017 (2013.01); H01L 21/3081 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76898 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01);
Abstract

Methods for minimizing plasma-induced sidewall damage during low k etch processes are disclosed. The methods etch the low k layers using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N≡C—R; (N≡C—)—(R)—(—C≡N); R[—C═N(R)]; and R—N—H, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HFCwith a=0-11, b=0-11, and c=0-5.

Find Patent Forward Citations

Hsu, Chih-yu. (2019). Methods of minimizing plasma-induced sidewall damage during low k etch processes (U.S. Patent No. 10347498). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10347498

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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