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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10347485 B1

PDFFull Text
Date of Patent:
Jul. 09, 2019

Filed:

Sep. 14, 2015

Reflective mask blank, method for manufacturing same, reflective mask, method for manufacturing same, and method for manufacturing semiconductor device

Applicant:

Hoya Corporation, Tokyo, JP;

Inventors:

Tsutomu Shoki, Tokyo, JP;

Tatsuo Asakawa, Tokyo, JP;

Hirofumi Kozakai, Tokyo, JP;

Assignee:

HOYA CORPORATION, Shinjuku-ku, Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Christopher G Young

Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/48 (2012.01); G03F 1/54 (2012.01); G03F 1/76 (2012.01); G03F 1/80 (2012.01); G03F 1/86 (2012.01); G03F 7/20 (2006.01); C23C 14/18 (2006.01); C23C 14/34 (2006.01); C23C 14/46 (2006.01); C23C 14/58 (2006.01); H01L 21/027 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/35 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); C23C 14/18 (2013.01); C23C 14/185 (2013.01); C23C 14/34 (2013.01); C23C 14/46 (2013.01); C23C 14/5806 (2013.01); G03F 1/24 (2013.01); G03F 1/48 (2013.01); G03F 1/54 (2013.01); G03F 1/76 (2013.01); G03F 1/80 (2013.01); G03F 1/86 (2013.01); G03F 7/2002 (2013.01);
Abstract

The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams. The present invention provides a reflective mask blank for EUV lithography in which a conductive underlying film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are layered on a substrate, wherein the conductive underlying film is a single-layer film made of a tantalum-based material or a ruthenium-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film, or the conductive underlying film is a multilayer film including a layer of a tantalum-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film and a layer of a conductive material that is formed between the layer of the tantalum-based material and the substrate. The present invention also provides a reflective mask manufactured using the reflective mask blank. Furthermore, a semiconductor device is manufactured using the reflective mask.

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