The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Aug. 22, 2016
Applicant:

Regents of the University of Minnesota, Minneapolis, MN (US);

Inventors:

Jian-Ping Wang, Shoreview, MN (US);

Patrick Quarterman, Minneapolis, MN (US);

Jianxin Zhu, Eagan, MN (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01F 41/30 (2006.01); H01J 37/32 (2006.01); H01L 29/82 (2006.01); H01L 43/08 (2006.01); H01J 37/317 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3244 (2013.01); H01F 41/308 (2013.01); H01J 37/3178 (2013.01); H01J 37/321 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 29/82 (2013.01); H01L 43/08 (2013.01); H01J 2237/334 (2013.01);
Abstract

In some examples, a method including depositing a functional layer over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing, via reactive ion etching with a carrier gas, portions of the functional layer not masked by the hard mask layer, wherein the carrier gas comprises a gas with an atomic number less than an atomic number of argon.


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