The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Dec. 29, 2017
Spin Memory, Inc., Wilmington, DE (US);
Kadriye Deniz Bozdag, Sunnyvale, CA (US);
Marcin Gajek, Berkeley, CA (US);
Mourad El Baraji, Fremont, CA (US);
Eric Michael Ryan, Fremont, CA (US);
SPIN MEMORY, INC., Wilmington, DE (US);
Abstract
A magnetic storage device is provided. The magnetic storage device comprises a magnetic memory cell, which includes two or more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic characteristic and a first electrical characteristic and a second MTJ has a second magnetic characteristic and a second electrical characteristic, wherein the first magnetic characteristic is distinct from the second magnetic characteristic. The magnetic memory cell further comprises a bottom electrode and a top electrode, wherein the two or more MTJs are arranged between the top and bottom electrode in parallel with respect to each other. The magnetic storage device further comprises readout circuitry coupled to the bottom electrode or the top electrode of the magnetic memory cell and write circuitry coupled to the bottom electrode or the top electrode of the magnetic memory cell.