The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Nov. 09, 2017
Applicants:
Jin Park, Yongin-si, KR;
Hyun-woo Kim, Seongnam-si, KR;
Jin-kyu Han, Hwaseong-si, KR;
Cha-won Koh, Yongin-si, KR;
Inventors:
Jin Park, Yongin-si, KR;
Hyun-woo Kim, Seongnam-si, KR;
Jin-Kyu Han, Hwaseong-si, KR;
Cha-Won Koh, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/075 (2006.01); H01L 21/311 (2006.01); H01L 27/11582 (2017.01); G03F 7/039 (2006.01); H01L 27/1157 (2017.01); H01L 27/11575 (2017.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/0392 (2013.01); G03F 7/0757 (2013.01); G03F 7/0758 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 27/1157 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 21/76802 (2013.01);
Abstract
A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction. The second repeating unit includes a silicon-containing leaving group that is configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit.