The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Apr. 25, 2018
Applicants:
Japan Advanced Institute of Science and Technology, Ishikawa, JP;
Sumitomo Seika Chemicals Co., Ltd., Hyogo, JP;
Inventors:
Satoshi Inoue, Ishikawa, JP;
Tatsuya Shimoda, Ishikawa, JP;
Nobutaka Fujimoto, Osaka, JP;
Kiyoshi Nishioka, Hyogo, JP;
Shuichi Karashima, Osaka, JP;
Assignees:
Japan Advanced Institute of Science and Technology, Ishikawa, JP;
Sumitomo Seika Chemicals Co., Ltd., Hyogo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); C09D 7/61 (2018.01); C09D 5/00 (2006.01); C09D 169/00 (2006.01); C08G 64/02 (2006.01); H01L 29/786 (2006.01); H01L 21/385 (2006.01); H01L 21/477 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); C09D 5/008 (2013.01); C09D 7/61 (2018.01); C09D 169/00 (2013.01); H01L 21/385 (2013.01); H01L 21/477 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); C08G 64/02 (2013.01);
Abstract
It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment.